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Density of states (number of levels per 50 meV) calculated for hydrogenated Si NCs with diameters close to (a) 1.8, (b) 3.0, and (c) 5.0 nm. The energies of first two electron states calculated in effective mass approximation (Ref. 14), including effect of tunneling into matrix, are shown by vertical dashed lines. Empty bars correspond to the -related states (Ref. 17).
Normalized intraband radiative matrix element for NC with as function of electron and hole energies and . For better presentation, the dependence of on and has been convoluted with Lorentzians with half widths equal to 0.1 eV. The inclined line corresponds to the condition .
Calculated rates of direct radiative recombination of hot electrons with holes. Panels (a) and (b) were calculated for NCs with and . Open circles correspond to the transitions involving -related electron states (Ref. 17). The shaded areas indicates the relatively slow transitions with .
Rates of single optical phonon emission by electrons and holes in Si NC . Vertical lines illustrate energies of confined carriers in the bottleneck regions, where single-phonon relaxation is impossible.
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