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Optical transitions and energy relaxation of hot carriers in Si nanocrystals
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View: Figures


Image of FIG. 1.
FIG. 1.

Density of states (number of levels per 50 meV) calculated for hydrogenated Si NCs with diameters close to (a) 1.8, (b) 3.0, and (c) 5.0 nm. The energies of first two electron states calculated in effective mass approximation (Ref. 14), including effect of tunneling into matrix, are shown by vertical dashed lines. Empty bars correspond to the -related states (Ref. 17).

Image of FIG. 2.
FIG. 2.

Normalized intraband radiative matrix element for NC with as function of electron and hole energies and . For better presentation, the dependence of on and has been convoluted with Lorentzians with half widths equal to 0.1 eV. The inclined line corresponds to the condition .

Image of FIG. 3.
FIG. 3.

Calculated rates of direct radiative recombination of hot electrons with holes. Panels (a) and (b) were calculated for NCs with and . Open circles correspond to the transitions involving -related electron states (Ref. 17). The shaded areas indicates the relatively slow transitions with .

Image of FIG. 4.
FIG. 4.

Rates of single optical phonon emission by electrons and holes in Si NC . Vertical lines illustrate energies of confined carriers in the bottleneck regions, where single-phonon relaxation is impossible.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical transitions and energy relaxation of hot carriers in Si nanocrystals