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Surface polar phonon scattering rate of graphene electron on SiC, , and for the electron density of at 300 K. Also plotted is the intrinsic graphene optical phonon scattering rate at 300 K (“intrinsic”) obtained from Ref. 13.
Electron drift velocity in graphene on SiC, , and . The intrinsic case without substrate is also shown. The electron density is at 300 K.
Electron distribution function with different substrate conditions: intrinsic (dashed-dotted), SiC (solid), (dashed), and (dotted) for the cross section at 20 kV/cm. The boxlike function corresponds to the Fermi–Dirac distribution displaced by the SPP energy (60 meV) in a simple, metal-like approximation (i.e., ) with . For comparison, the equilibrium Fermi–Dirac distribution at 300 K is also plotted.
Electrical resistivity vs temperature with different substrate conditions: intrinsic (circle), SiC (square), (triangle), and (diamond) with . The slope of the straight lines is used to extract the acoustic deformation potential.
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