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Pseudomorphic strain induced strong anisotropic magnetoresistance over a wide temperature range in epitaxial films
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View: Figures


Image of FIG. 1.
FIG. 1.

Inset (a): the in-plane unit cells of LCMO(001) (green or gray) and NGO(001) (wine or black), and the lattice mismatches in between. Inset (b): curves of the (001)-films at various thicknesses. The curves of the 30 nm (110)-film are also shown for comparison. The main panel shows the curves of the 50 nm film measured with and , and the inset (c) shows the after subtracting the contribution from the substrate. The arrows denote the cooling or warming process. and the onset of AFI at were also marked.

Image of FIG. 2.
FIG. 2.

(a) curves of the 50 nm film measured on FW at various fields with and (b) the -dependent CMR. The inset shows schematically the orientation of with respect to the crystal axes and the electrical current (I). (c) curve on FW at 0.5 T with along , , and axes, respectively, and (d) the -dependent in-plane AMR at 0.1, 0.25, 0.5, and 1 T, and out-of-plane AMR at 0.5 T.

Image of FIG. 3.
FIG. 3.

curves measured after ZFC of the 50 nm film to (a) 270, 265, 260, (b) 150, and 100 K. For a fixed target temperature, the ZFC process was repeated three times, each for a curve with the applied along a different axis. The arrows denote the cycling of , and in the PS regime the full melting (initial reentry) of the AFI phase was marked by . The insets show the -dependent out-of-plane AMR and in-plane AMR at the corresponding temperatures.

Image of FIG. 4.
FIG. 4.

(a) and (b) curves measured at different and , as denoted. In (b), the curve at 150 K and 0.5 T was inserted for comparison.

Image of FIG. 5.
FIG. 5.

RSMs around (a) (026) and (b) (206) reflections from the 50 nm sample. The film reflections were marked by the arrows. loops measured after the ZFC of the film to (c) 250 K, or to (d) 100 K and then cycling to 4 T.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pseudomorphic strain induced strong anisotropic magnetoresistance over a wide temperature range in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films