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Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure
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10.1063/1.3524524
/content/aip/journal/apl/97/24/10.1063/1.3524524
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3524524
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Figures

Image of FIG. 1.
FIG. 1.

(a) Scanning electron microscope image of hexagonal nanopyramid array. Crystallographic directions are shown. (b) Cross sectional transmission electron microscope image of the nanostructure.

Image of FIG. 2.
FIG. 2.

Temperature dependence of the integrated PL intensity for both 460 nm MQW on (0001) sapphire substrate and 570 nm MQW on nanopyramid structure. The intensities are normalized to their values at 10 K.

Image of FIG. 3.
FIG. 3.

PL emission peak vs temperature for (a) 460 nm blue LED on (0001) sapphire, (b) and 570 nm MQW on nanopyramid structure, and (c) 540 nm MQW on micropyramid structure.

Image of FIG. 4.
FIG. 4.

Emission peak shifts of blue LED, 570 nm MQW on nanopyramid structure, and 540 nm MQW on micropyramid structure as a function of injection power. Due to their difference in emission wavelength, relative peak shifts are compared.

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/content/aip/journal/apl/97/24/10.1063/1.3524524
2010-12-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3524524
10.1063/1.3524524
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