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Highly conducting zinc oxide thin films achieved without postgrowth annealing
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10.1063/1.3525575
/content/aip/journal/apl/97/24/10.1063/1.3525575
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3525575
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD spectra of AZO films grown at different temperatures . The (002) peak at around 34° shows the pronounced c-axis orientation in the thin films. A small peak at 36.2 is due to (101) orientation, which has a minimum intensity for the sample grown at . The right inset shows the deviation of the (002) peaks from that of undoped ZnO powder and the left inset shows the high resolution XPS spectrum of Al 2S in AZO.

Image of FIG. 2.
FIG. 2.

Variation of grain size with growth temperature. The inset shows the AFM micrographs of surface morphology of 2% AZO thin films grown at RT (upper left) and (lower right). Connecting line is guide for eyes.

Image of FIG. 3.
FIG. 3.

Hall Measurements, showing resistivity as a function of Al content grown at . The inset shows variation of carrier concentration n and mobility as a function of growth temperatures . Connecting lines are guide for eyes.

Image of FIG. 4.
FIG. 4.

Transmission spectra of the 0.1%–4% AZO films grown at . The inset shows the transmission spectra of 2% AZO thin films grown at 100 and .

Image of FIG. 5.
FIG. 5.

Optical bandgap variation as a function of Al content for AZO films grown at . The dotted line shows the bandgap of undoped ZnO (3.31 eV). Inset (A) on top left schematically shows the BM effect. Inset (B) on bottom right shows the effect of BGR. Connecting line is guide for eyes.

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/content/aip/journal/apl/97/24/10.1063/1.3525575
2010-12-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly conducting zinc oxide thin films achieved without postgrowth annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3525575
10.1063/1.3525575
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