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Schematic cross-section of AlGaN/GaN-based SBD device with -diameter Schottky contact.
Typical forward and reverse characteristics for AlGaN/GaN-based SBDs with -diameter Schottky contacts (top) and multifinger patterned contacts (bottom).
Simulated and experimental results obtained from multifinger SBD structures with the size of .
Temperature dependent forward characteristics (top) and Schottky barrier heights (bottom) from multifinger SBDs with the size of .
Reverse leakage current of multifinger patterned SBDs at different measurement temperatures.
Key parameters used in simulation.
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