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Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes
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10.1063/1.3525931
/content/aip/journal/apl/97/24/10.1063/1.3525931
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3525931

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross-section of AlGaN/GaN-based SBD device with -diameter Schottky contact.

Image of FIG. 2.
FIG. 2.

Typical forward and reverse characteristics for AlGaN/GaN-based SBDs with -diameter Schottky contacts (top) and multifinger patterned contacts (bottom).

Image of FIG. 3.
FIG. 3.

Simulated and experimental results obtained from multifinger SBD structures with the size of .

Image of FIG. 4.
FIG. 4.

Temperature dependent forward characteristics (top) and Schottky barrier heights (bottom) from multifinger SBDs with the size of .

Image of FIG. 5.
FIG. 5.

Reverse leakage current of multifinger patterned SBDs at different measurement temperatures.

Tables

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Table I.

Key parameters used in simulation.

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/content/aip/journal/apl/97/24/10.1063/1.3525931
2010-12-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3525931
10.1063/1.3525931
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