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Top and side schematics (left/right) of the MESFET device.
(a) Net doping density vs the width of the space charge region below the Schottky contact and vs the applied gate voltage (channel thickness 160 nm). (b) Output characteristic of a MESFET with a GIZO channel annealed at after thin film deposition. (c) Transfer characteristics and gate currents (dashed lines) for as-grown and annealed GIZO channel materials, . (d) Schottky gate characteristics of the respective GIZO transistors.
Channel thickness , width-to-length ratio of the Schottky gate contact, Hall-effect data (derived from 120 nm thick films), and measured electrical parameters of the MESFETs.
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