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Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
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10.1063/1.3525932
/content/aip/journal/apl/97/24/10.1063/1.3525932
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3525932

Figures

Image of FIG. 1.
FIG. 1.

Top and side schematics (left/right) of the MESFET device.

Image of FIG. 2.
FIG. 2.

(a) Net doping density vs the width of the space charge region below the Schottky contact and vs the applied gate voltage (channel thickness 160 nm). (b) Output characteristic of a MESFET with a GIZO channel annealed at after thin film deposition. (c) Transfer characteristics and gate currents (dashed lines) for as-grown and annealed GIZO channel materials, . (d) Schottky gate characteristics of the respective GIZO transistors.

Tables

Generic image for table
Table I.

Channel thickness , width-to-length ratio of the Schottky gate contact, Hall-effect data (derived from 120 nm thick films), and measured electrical parameters of the MESFETs.

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/content/aip/journal/apl/97/24/10.1063/1.3525932
2010-12-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3525932
10.1063/1.3525932
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