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Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
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10.1063/1.3525932
/content/aip/journal/apl/97/24/10.1063/1.3525932
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3525932
/content/aip/journal/apl/97/24/10.1063/1.3525932
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/content/aip/journal/apl/97/24/10.1063/1.3525932
2010-12-15
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3525932
10.1063/1.3525932
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