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Direct imaging of boron segregation to extended defects in silicon
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10.1063/1.3526376
/content/aip/journal/apl/97/24/10.1063/1.3526376
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3526376
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Figures

Image of FIG. 1.
FIG. 1.

TEM images of a Si sample implanted with atoms at with an energy of 30 keV and annealed at for 30 s under : (a) plane-view image, (b) cross section image. The area and cross section of APT samples are superimposed to the images in order to evidence that at least one loop should be observed in the volume analyzed by APT.

Image of FIG. 2.
FIG. 2.

APT reconstructions of a Si sample implanted with atoms at with an energy of 30 keV and annealed at for 30 s under : (a) reconstruction of the entire analysis showing the decoration of extended defects by boron. The decoration of two types of extended defects was observed: (b) dislocation loop, (c) rod-like defects.

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/content/aip/journal/apl/97/24/10.1063/1.3526376
2010-12-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct imaging of boron segregation to extended defects in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3526376
10.1063/1.3526376
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