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Graphene growth by molecular beam epitaxy on the carbon-face of SiC
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10.1063/1.3526720
/content/aip/journal/apl/97/24/10.1063/1.3526720
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3526720
/content/aip/journal/apl/97/24/10.1063/1.3526720
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/content/aip/journal/apl/97/24/10.1063/1.3526720
2010-12-13
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Graphene growth by molecular beam epitaxy on the carbon-face of SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3526720
10.1063/1.3526720
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