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(a) Lattice structure of the coupled semiconductor QDs with lattice constant . Each unit cell contains two QDs that are denoted by A and B, respectively. There are three NNs, six next-NNs, and three third-NNs for each dot. (b) Corresponding Brillouin zone.
The electronic structures of GaAs coupled dots arranged as graphene hexagonal lattice with structural parameters , , and .
The tight-binding integral parameters of GaAs coupled QDs arranged as hexagonal lattice with structural parameters , , and . , , and are the hopping energies including the multicenter integral. , , and are the hopping energies with the two-center approximation. , , and are the overlap integrals.
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