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Enhancement of perpendicular exchange bias in [Pd/Co]/FeMn thin films by tailoring the magnetoelastically induced perpendicular anisotropy
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10.1063/1.3526735
/content/aip/journal/apl/97/24/10.1063/1.3526735
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3526735
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The normalized EHE loops of PEB thin films without and with different CoFe insertion layers and thicknesses: (a) , ; (b) , ; (c) , ; and (d) , , with of 3, 5, and 10 mTorr.

Image of FIG. 2.
FIG. 2.

Dependence of (a) and (b) of or PEB thin films on the .

Image of FIG. 3.
FIG. 3.

(a) Dependence of film resistivity of or (0.6)/FeMn(11.6)/Ta(2.1 nm) PEB thin films and single-layered thin films on , and (b) XRD patterns of 20 nm single-layered thin films deposited at different varied from 1.7 to 20 mTorr.

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/content/aip/journal/apl/97/24/10.1063/1.3526735
2010-12-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of perpendicular exchange bias in [Pd/Co]/FeMn thin films by tailoring the magnetoelastically induced perpendicular anisotropy
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3526735
10.1063/1.3526735
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