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The population transfer efficiency as the pump laser is detuned for the 1.5 nm Ge NC (top) and the 2.1 nm Si NC (bottom), with and without two-photon resonance . The left inset in the upper graph is a close-up for the central peak. The short blue lines on the detuning axis the energies of the intermediate states. The insets on the right show the electronic states and laser energies.
Effect of dc Stark field on the overall transfer efficiency and maximum intermediate-state population for the 2.1 nm Si NC. The lines are only to guide the eyes.
Two-photon detuning vs transfer efficiency for different time delays for the 2.1 nm Si NC. Upper inset: the maximum probability of finding the electron in any of the intermediate states throughout the transfer process. Lower inset: the effect of NC ellipticity on the two-photon detuning and transfer efficiency (lines are guides to the eyes); the horizontal dashed line marks the critical 0.3 meV two-photon detuning.
Laser parameters optimized for STIRAP for the 2.1 nm Si, and 1.5 nm Ge NCs. The incident electric fields are specified for free-space medium. Delay refers to time between the peaks of the Stokes and pump pulses both with Gaussian profiles.
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