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Superlatticelike dielectric as a thermal insulator for phase-change random access memory
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Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the PCRAM cell and TEM image of the superlatticelike dielectric structure. Simulation of the temperature profile of PCRAM cells with (b) SLL and (c) dielectric. The thermal conductivities of SLL and dielectric used were 0.28 and 1.4 W/m K, respectively. Good heat confinement is observed in the cell with SLL dielectric.

Image of FIG. 2.
FIG. 2.

Dependence of the current on the pulse-width required to (a) amorphize and (b) crystallize the cells with seven periods of SLL dielectric and a single layer of dielectric. Cells with SLL dielectric require lower current and shorter pulse-width to phase-change. Pulse-widths as low as 5 ns can be achieved to switch the cells with SLL dielectric.

Image of FIG. 3.
FIG. 3.

Correlation between the amorphization current and crystallization pulse-width with the number of SLL periods. Lower currents and shorter pulse-widths were achieved when the number of periods in the SLL dielectric increases.

Image of FIG. 4.
FIG. 4.

Endurance performance of PCRAM cell with SLL dielectric. The cell has good dielectric breakdown properties, which enables it to achieve stable and reversible phase-change for overwriting cycles.


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Table I.

Material thermal parameters.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Superlatticelike dielectric as a thermal insulator for phase-change random access memory