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Nontunnel transport through nanometric barriers
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View: Figures


Image of FIG. 1.
FIG. 1.

Conductance of CFO thin layers as a function of thickness: (a) measured on Pt contacts for samples of series 2. Filled symbols (right scale) correspond to the typical current density measured in current maps. Open symbols (left scale) represent the low-voltage area resistance as determined from J-V curves. (b) Corresponding data obtained directly on CFO for samples of series 1 (lines are guide to the eyes).

Image of FIG. 2.
FIG. 2.

(a) J-V curves measured for samples (series 2) with different CFO layer thicknesses. Data for 2.5 nm were divided by a factor of 3 for better representation in the same scale. Exemplary fits are shown as white lines for 6 and 8 nm. (b) Fit results for energy barrier width (filled symbols) and height (open symbols) vs CFO layer thickness using two different fitting procedures (multiple points correspond to several contacts measured; lines are guides to the eyes).

Image of FIG. 3.
FIG. 3.

Comparison of the J-V and I-V characteristics for samples with different CFO thicknesses. Measured curves of different samples are divided one by the other as indicated. (a) Series 2 with Pt contacts. (b) Series 1 on CFO.

Image of FIG. 4.
FIG. 4.

Simulated ratio of current densities as a function of voltage for the Simmons model for indicated parameters.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nontunnel transport through CoFe2O4 nanometric barriers