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Passivation effects of fluorine and hydrogen at the interface
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10.1063/1.3527943
/content/aip/journal/apl/97/24/10.1063/1.3527943
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3527943
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematics of the most stable configuration for the defect containing (a) a single C atom and (b) the corresponding local structures after two H atoms, (c) two F atoms, or (d) one H and one F atoms are bonded to the defect. The figures are viewed with slightly different orientations for better visualization.

Image of FIG. 2.
FIG. 2.

Schematics of the defects due to the correlated C dangling bonds (a) right at the interface or (b) near the interface and the resulted configurations after (c) two F atoms or (d) a combination of one H and one F atoms are bonded to the defect right at the interface.

Image of FIG. 3.
FIG. 3.

Total densities of states for the configurations due to correlated C dangling bonds before and after fluorine passivation [Figs. 2(a) and 2(c)]. Only the states in the vicinity of the band gap are shown.

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/content/aip/journal/apl/97/24/10.1063/1.3527943
2010-12-17
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Passivation effects of fluorine and hydrogen at the SiC–SiO2 interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3527943
10.1063/1.3527943
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