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Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices
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10.1063/1.3527962
/content/aip/journal/apl/97/24/10.1063/1.3527962
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3527962
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Figures

Image of FIG. 1.
FIG. 1.

(a) OST-MRAM layer stack. A perpendicularly magnetized polarizer (P) is separated by a nonmagnetic metal from the free magnetic layer (FL). The free layer forms one electrode of a MTJ. The other electrode, the reference layer, consists of a synthetic antiferromagnetic (SAF). (b) VSM measurements of the magnetization of the layer stack. The curve connecting the solid circular data points shows the switching of the FL and SAF under an in-plane applied field. The curve with square data points shows the characteristics of the polarizing layer in a field applied perpendicular to the plane, demonstrating a high remanence and a coercive field of 26 mT. (c) Device resistance vs in-plane field showing 107% MR and the switching of the FL from the P to AP state at 12 mT and AP to P state at 16 mT.

Image of FIG. 2.
FIG. 2.

Switching probability from the P to the AP state as a function of pulse duration for three different pulse amplitudes at an applied field of 0.01 T. 100% switching probability is achieved for pulses of less than 500 ps duration.

Image of FIG. 3.
FIG. 3.

Switching probability as a function of pulse amplitude at a fixed pulse duration of 700 ps (a) P to AP state. (b) AP to P state. The switching is bipolar, occurring for both positive and negative pulse polarities.

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/content/aip/journal/apl/97/24/10.1063/1.3527962
2010-12-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3527962
10.1063/1.3527962
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