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(a) Temperature-dependent characteristics of anodized Ta lateral junction with dimension of . Inset is a resistance-voltage curve at . (b) Top-view image and side-view diagram of junction structure. (c) Schematic diagram of possible current transport mechanisms responsible for the results in (a).
(a) Plot of vs generated from the data in Fig. 1, at selected ’s. (b) and vs curves at are magnified, respectively. (c) Experimental (points) and calculated (line) curves of Ta oxide-metal junction at . (d) Plot of vs at calculated from Fig. 1. (e) Fitting results of barrier height as a function of by Eq. (1). (f) calculated from (d) at various 's.
(a) Arrhenius plot calculated from the data in Fig. 1, at various voltages. (b) Plot of vs at various voltages. (c) Plot of vs at various voltages. (d) The fitting results of .
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