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Increasing the coherence time of single electron spins in diamond by high temperature annealing
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10.1063/1.3527975
/content/aip/journal/apl/97/24/10.1063/1.3527975
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3527975

Figures

Image of FIG. 1.
FIG. 1.

Hahn echo decays of single NV centers produced by implanting nitrogen ions with showing two types of : short (left) and long (right). The oscillations are induced by coupling to the nitrogen nucleus (left) and spin bath (right). See Refs. 11 and 12 for more details.

Image of FIG. 2.
FIG. 2.

Electron spin coherence time of NV centers before (empty bars) and after annealing (filled bars). Note that is the lowest limit for the NVs with long .

Tables

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Table I.

Production efficiency of NV and its position in the diamond crystal as a function of the implantation energy. The position and straggle (approximately half width at half maximum) of the nitrogen ions in the diamond have been calculated with SRIM 2010 (Ref. 17). Note that these calculations do not include channeling effects, which could play a significant role at lower energies, as shown recently in Ref. 18.

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/content/aip/journal/apl/97/24/10.1063/1.3527975
2010-12-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Increasing the coherence time of single electron spins in diamond by high temperature annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/24/10.1063/1.3527975
10.1063/1.3527975
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