banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Giant magnetic domain-wall resistance in phase-separated manganite films
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

Resistance vs temperature for three CPP devices with (▲), 20 (◼), and 40 (●) nm. Four-terminal CIP measurements of an unpatterned trilayer with (○) are also shown. Inset: schematic device geometry showing contact pads (thick lines) for voltage and current terminals.

Image of FIG. 2.
FIG. 2.

Magnetization vs applied magnetic field at 50 K for the three unpatterned trilayer films cut to .

Image of FIG. 3.
FIG. 3.

Resistance vs at 25 K after zero-field cooling, for the three CPP devices. The inset shows low-field switching jump vs for these devices (△) and our previous CPP device with an LCMO40 interlayer (○).

Image of FIG. 4.
FIG. 4.

Magnetoresistance MR in , after zero-field cooling to 25 K and then cycling in a small field to remove magnetic domains, for the three CPP devices with LCMO41 interlayers of thicknesses (○), 20 nm (◼), and 40 nm (△). Equivalent data are also shown for the CPP device of Ref. 14, which has an LCMO40 interlayer of thickness (▲). Left inset: LFMR for the device at 25 K after having applied and removed . The right inset shows how these data were collected over time .


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Giant magnetic domain-wall resistance in phase-separated manganite films