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Resistance vs temperature for three CPP devices with (▲), 20 (◼), and 40 (●) nm. Four-terminal CIP measurements of an unpatterned trilayer with (○) are also shown. Inset: schematic device geometry showing contact pads (thick lines) for voltage and current terminals.
Magnetization vs applied magnetic field at 50 K for the three unpatterned trilayer films cut to .
Resistance vs at 25 K after zero-field cooling, for the three CPP devices. The inset shows low-field switching jump vs for these devices (△) and our previous CPP device with an LCMO40 interlayer (○).
Magnetoresistance MR in , after zero-field cooling to 25 K and then cycling in a small field to remove magnetic domains, for the three CPP devices with LCMO41 interlayers of thicknesses (○), 20 nm (◼), and 40 nm (△). Equivalent data are also shown for the CPP device of Ref. 14, which has an LCMO40 interlayer of thickness (▲). Left inset: LFMR for the device at 25 K after having applied and removed . The right inset shows how these data were collected over time .
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