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(a) Optical micrograph of GaN-based DFB SEL. (b) Schematic cross section along line . (c) Schematic top view of 2D square-lattice PhC arrangement. (d) Distribution of refractive index and optical power profile of device in vertical direction. (e) Schematic illustration of reciprocal space of 2D PhC. Solid arrow , dashed arrows , and solid arrows , respectively, denote the wave vector of the traveling wave; the wave vectors of the diffracted wave and the reciprocal lattice vectors.
(a) Cross-sectional SEM image of the PhC layer in laser device. (b) Magnified cross-sectional SEM image of the PhC void. (c) Three-dimensional schematic of the PhC void consisting of crystallographic facets.
(a) L-I and V-I curves under pulsed operation at room temperature. (b) Magnified L-I curve around the threshold current. (c) Lasing spectra for devices with PhC lattice constants of 162.5 (left) and 165.0 nm (right).
(a) Emission image focused on the device surface at 1300 mA. (b) -polarized component of the emission pattern. (c) -polarized component of the emission pattern. (d) Far-field pattern.
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