Full text loading...
Conduction band and wave function diagram for the shallow-well design. The comb-shaped structure denotes the conduction band profile of (well) and (barrier) with AlAs inserts and close-to-lattice-matched and . The superimposed horizontal curves are the modulus-squared wave functions displaced in the vertical axis by the corresponding eigenenergies. Starting with the injection barrier, the thicknesses in nanometers for one QCL stage are (left to right) as follows: 3.2, (1.4), (1.8), 3.8, 1.6, 3.5, [0.6, 0.58 , 0.6], 2.9, [0.4, 0.58 , 0.4], 2.6, [0.45, 0.58 , 0.45],2.3, [0.5, 0.58, 0.5], 2.2, [0.6, 0.58, 0.6], 2.2, [0.6, 0.58 , 0.6], 2.0, [0.86, 0.58 , 0.86], where the barriers are in bold and wells are in normal font. The close-to-lattice-matched materials are in parentheses. Composite barriers are emphasized by bracket with AlAs inserts in bold and italic. The underlined thicknesses represent the doped layers.
(a) Power-current-voltage relation of the double-channel processed device at different temperatures in pulsed mode operation. (b) Extracted threshold current density and slope efficiency at different temperatures. The dashed curves are exponential fit with and for the threshold current density and slope efficiency, respectively. The fitting parameters are as follows: , , , and .
Room temperature performances for the buried-ridge device. The device is epilayer-down bonded to a diamond submount and then indium soldered to a copper heat sink. The ridge width and cavity length of the device are and 5 mm, respectively. The back facet is high-reflection coated and the front facet is antireflection coated. The dashed curves are for pulsed mode operation and solid curves for continuous wave operation.
(a) Lasing spectrum and (b) far field in room temperature continuous wave operation at different currents.
Article metrics loading...