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Highly polarized self-assembled chains of single layer InP/(In,Ga)P quantum dots
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10.1063/1.3529467
/content/aip/journal/apl/97/25/10.1063/1.3529467
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/25/10.1063/1.3529467
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Figures

Image of FIG. 1.
FIG. 1.

(a) AFM micrograph of a sample without a cap layer with excitation directions, the height contrast is between 0 and 6 nm, the scale for AFM micrograph is , and the scale for inset micrograph is . (b) PL spectrum for laterally ordered QDs; emission at 630 nm stems from InGaP and emission at 660 nm stems from InP QDs.

Image of FIG. 2.
FIG. 2.

Polarization-dependent PL measurements for the samples with QDs. (a) The collection polarization dependence of the InGaP buffer layer, in sample A, for , 45°, and 90°. (b) The collection polarization dependence of the InP QDs, in sample A, for , 45°, and 90°. (c) The collection polarization dependence of the InGaP buffer layer, in sample B, for and 45°; is normalized at 10° collection polarization since the data points for and 5° were noisy. (d) Two-dimensional (2D)-plot for excitation polarization direction , sample A. (e) 2D-plot for excitation polarization direction , sample A. (f) 2D-plot for excitation polarization direction , sample B.

Image of FIG. 3.
FIG. 3.

TEM images for the samples (a) without undulations, no lateral composition can be seen; and (b) with undulations, lateral composition can be seen with darker regions to be In-rich and brighter regions to be Ga-rich.

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/content/aip/journal/apl/97/25/10.1063/1.3529467
2010-12-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly polarized self-assembled chains of single layer InP/(In,Ga)P quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/25/10.1063/1.3529467
10.1063/1.3529467
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