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The vertically stacked organic sensor-transistor on a flexible substrate
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The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/phenyl--butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction polymer and pentacene-based organic field-effect transistors, which are stacked via poly(dimethylsiloxane) (PDMS) on the plastic substrate. The results indicate that the anode-source current is variable because of both the charge separation of the photogenerated excitons and the accumulated charges at the OFET channel layer. The light dependent photo response is modulated from 0.47 to 1.9 by the gate-source voltage at the fixed anode-source voltage of the ST-circuits.
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