1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Peculiarities of impact ionization of Impurity Al in SiC polytypes
Rent:
Rent this article for
USD
10.1063/1.3527964
/content/aip/journal/apl/97/26/10.1063/1.3527964
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3527964
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The geometry of the samples for the measurements in the electric fields parallel to the -axis (a) and perpendicular to the -axis (b).

Image of FIG. 2.
FIG. 2.

The characteristics of p-type 4H-, 6H-, and 15R-SiC samples with different . (a) 4H-SiC: 1-,77 K; 2-, 300 K; 3-, 300 K; 4-, 77 K; 5-, 77 K; . (b) 6H-SiC: 1-, 77 K; 2-, 77 K; 3-, 77 K; ; 4-, 77 K, . (c) 15R-SiC: 1-, 77 K; 2-, 4.2 K; .

Image of FIG. 3.
FIG. 3.

The dependence of Al impurity breakdown field in 4H-, 6H-, and 15R-SiC on .

Image of FIG. 4.
FIG. 4.

The surface of the constant hole density for a hole localized on an acceptor. The length unit is 10 Å.

Loading

Article metrics loading...

/content/aip/journal/apl/97/26/10.1063/1.3527964
2010-12-30
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Peculiarities of impact ionization of Impurity Al in SiC polytypes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3527964
10.1063/1.3527964
SEARCH_EXPAND_ITEM