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Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth
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10.1063/1.3530433
/content/aip/journal/apl/97/26/10.1063/1.3530433
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3530433
/content/aip/journal/apl/97/26/10.1063/1.3530433
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/content/aip/journal/apl/97/26/10.1063/1.3530433
2010-12-28
2014-07-11
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3530433
10.1063/1.3530433
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