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(a) Schematic view of doped-nanowire SOI-FETs. (b) Potential profile simulated for a random distribution of ionized donors; two neighboring donors are indicated.
(a) characteristics for wide range, showing a sequence of irregular current oscillations. [(b) and (c)] Measurements of the first peak by successively sweeping upward and downward for two different devices. Inset: -time trace at , corresponding to the dashed line in (b). For all measurements, and .
(a) Equivalent circuit of two parallel coupled donor-QDs with variable gate capacitance. (b) Cross-sectional potential landscape for two donors without (top) and with (bottom) applied electric field . (c) dependence reflecting the donor-interface coupling under increasing electric field for the two donors: deeper donor (horizontal line) and superficial donor (inclined line).
(a) Contour plot of the voltage shift (difference between the voltages at which trapping and detrapping occur) as a function of slope and donor-donor tunnel resistance. [(b) and (c)] Simulated characteristics (upward and downward ramping) for two cases, indicated in (a): point A (b) and point B (c).
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