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Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors
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10.1063/1.3530442
/content/aip/journal/apl/97/26/10.1063/1.3530442
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3530442
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic view of doped-nanowire SOI-FETs. (b) Potential profile simulated for a random distribution of ionized donors; two neighboring donors are indicated.

Image of FIG. 2.
FIG. 2.

(a) characteristics for wide range, showing a sequence of irregular current oscillations. [(b) and (c)] Measurements of the first peak by successively sweeping upward and downward for two different devices. Inset: -time trace at , corresponding to the dashed line in (b). For all measurements, and .

Image of FIG. 3.
FIG. 3.

(a) Equivalent circuit of two parallel coupled donor-QDs with variable gate capacitance. (b) Cross-sectional potential landscape for two donors without (top) and with (bottom) applied electric field . (c) dependence reflecting the donor-interface coupling under increasing electric field for the two donors: deeper donor (horizontal line) and superficial donor (inclined line).

Image of FIG. 4.
FIG. 4.

(a) Contour plot of the voltage shift (difference between the voltages at which trapping and detrapping occur) as a function of slope and donor-donor tunnel resistance. [(b) and (c)] Simulated characteristics (upward and downward ramping) for two cases, indicated in (a): point A (b) and point B (c).

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/content/aip/journal/apl/97/26/10.1063/1.3530442
2010-12-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3530442
10.1063/1.3530442
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