1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Enhanced Ohmic contact via graphitization of polycrystalline silicon carbide
Rent:
Rent this article for
USD
10.1063/1.3531552
/content/aip/journal/apl/97/26/10.1063/1.3531552
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3531552
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

CTLM test structure. (a) Optical image of CTLM structure, (b) close-up SEM image of CTLM structure, and (c) schematic side-view and four-point probe testing setup.

Image of FIG. 2.
FIG. 2.

Contact resistance vs temperature for Pt/SiC and Pt/NGC/SiC contacts. Inset: representative I-V curve on Pt/SiC contact at room temperature with CTLM.

Image of FIG. 3.
FIG. 3.

AES and Raman (excitation wavelength of 632.8 nm) spectra (inset) of (a) as-deposited SiC and (b) after annealing at in ultrahigh vacuum.

Image of FIG. 4.
FIG. 4.

XRD spectra of (a) Pt/SiC contact, (b) Pt/NGC/SiC contact (both after testing in the air), and (c) SiC film with surface carbon layer.

Loading

Article metrics loading...

/content/aip/journal/apl/97/26/10.1063/1.3531552
2010-12-28
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced Ohmic contact via graphitization of polycrystalline silicon carbide
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3531552
10.1063/1.3531552
SEARCH_EXPAND_ITEM