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Coherent heteroepitaxy of on GaAs (111)B
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/content/aip/journal/apl/97/26/10.1063/1.3532845
2010-12-28
2014-10-23

Abstract

We report the heteroepitaxy of single crystalthin films of on the (111)B surface of GaAs by molecular beam epitaxy. We find that grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the , we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.

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Scitation: Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3532845
10.1063/1.3532845
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