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Single electron pumping through a quantum dot-embedded carbon nanotube using surface acoustic wave
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) (Top) CNT transistor was fabricated in the middle of the device and two IDTs 2.5 mm away from the CNT transistor. (Left bottom) IDT with . (Right bottom) SEM image of a CNT transistor with a side gate denoted as G with channel length . (b) Current as a function of gate voltage for bias voltage of . I and II denote each region representing “small” charging energy and “large” charging energy for embedded QDs in a CNT, respectively. (c) density plot as a function of bias voltage and gate voltage for belonging to region I. The brighter region represents higher conductance.

Image of FIG. 2.
FIG. 2.

(a) Current density plot as a function of rf-power applied to an IDT and gate voltages. (b) SAW-induced current (dotted line and dashed line for 0 and −5 dB m, respectively) and CBO without rf injection (solid line). denotes the shift of conductance peak in gate voltages. (c) Trace of conductance peaks (open square) and conductance dips (solid square) as a function of normalized SAW amplitudes and gate voltages.

Image of FIG. 3.
FIG. 3.

SAW-induced current as a function of for various rf-powers applied to transducers. The rf-powers were varied from 5 to 12 dB m by a 0.5 dB m step, and the frequency was set to a resonance frequency of . The dotted line represents where 1/3 corresponds to the duty-cycle of the pulse modulated rf signal. The inset shows the CB oscillation curve without rf-power. The arrow denotes the Coulomb blockade region where the SAW-induced single electron pumping has been observed.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single electron pumping through a quantum dot-embedded carbon nanotube using surface acoustic wave