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(a) Schematic view of the stacked -based RRAM devices. The forward direction was defined as . (b) The XRD spectrum of the Fe–O film. The phase of polycrystalline is observed.
(a) Typical bipolar resistive switching behavior of -STO stack-based RRAM cells. Schottky-like characteristic is observed in both HRS and LRS. (b) Resistance distribution of , , , and for 20 dc sweep cycles. Solid points indicate the and read at bias and hollow points indicate the and read at −0.5 V bias.
(a) Extracted effective Schottky barrier height for the HRS and the multiple LRS obtained under various set current compliances. (b) Measured the anticrosstalk ratio of and the switching ratio of as a function of set current compliance.
(a) Retention characteristics of the -STO stacked device under multiple switched resistive states. The read pulses of for 10 ns are applied. (b) The cycle-to-cycle uniformity and the resistance distributions tested for 1000 switching cycles. The read pulses of ±0.5 V for 10 ns are applied.
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