banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Anticrosstalk characteristics correlated with the set process for stack-based resistive switching device
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic view of the stacked -based RRAM devices. The forward direction was defined as . (b) The XRD spectrum of the Fe–O film. The phase of polycrystalline is observed.

Image of FIG. 2.
FIG. 2.

(a) Typical bipolar resistive switching behavior of -STO stack-based RRAM cells. Schottky-like characteristic is observed in both HRS and LRS. (b) Resistance distribution of , , , and for 20 dc sweep cycles. Solid points indicate the and read at bias and hollow points indicate the and read at −0.5 V bias.

Image of FIG. 3.
FIG. 3.

(a) Extracted effective Schottky barrier height for the HRS and the multiple LRS obtained under various set current compliances. (b) Measured the anticrosstalk ratio of and the switching ratio of as a function of set current compliance.

Image of FIG. 4.
FIG. 4.

(a) Retention characteristics of the -STO stacked device under multiple switched resistive states. The read pulses of for 10 ns are applied. (b) The cycle-to-cycle uniformity and the resistance distributions tested for 1000 switching cycles. The read pulses of ±0.5 V for 10 ns are applied.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anticrosstalk characteristics correlated with the set process for α-Fe2O3/Nb–SrTiO3 stack-based resistive switching device