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Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure
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10.1063/1.3533381
/content/aip/journal/apl/97/26/10.1063/1.3533381
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3533381
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Simulated depth profile of the distributed damaged vacancy created from the multiple energy and dose nitrogen implantation using TRIM software.

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics across two Ohmic contact pads separated with different gaps (1.7, 5, and ), where the gaps between the two Ohmic contact pads were implanted.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependent current-voltage characteristics across two Ohmic contact pads separated with a gap of , where the gap between the two Ohmic contact pads was implanted. (b) Current density vs the applied electrical field across two Ohmic contact pads separated with different gaps (1.7, 5, and 10 m), where the gaps between the two Ohmic contact pads were implanted.

Image of FIG. 4.
FIG. 4.

Sheet resistance of the implanted HEMT structure as a function of annealing temperature.

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/content/aip/journal/apl/97/26/10.1063/1.3533381
2010-12-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/26/10.1063/1.3533381
10.1063/1.3533381
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