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Giant Stark effect in the emission of single semiconductor quantum dots
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View: Figures


Image of FIG. 1.
FIG. 1.

Tunneling in different heterostructure designs. (a) Device designs considered for observation of the Stark effect of single QDs in vertical electric field. (b) Tunneling rates for electrons and holes in the various designs and (c) the proportion of carriers that tunnel out of a state with a fixed 1 ns lifetime state.

Image of FIG. 2.
FIG. 2.

Variation in the characteristics of one dot as a function of electric field. (a) Plot of photoluminescence from a single dot as a function of vertical field. (b) Cross sectional transmission electron-microscope image of the central region of the cavity and (c) band diagram of the device at 0.0 and 1.5 V. (d) Decay time of the transitions as a function of electric field.

Image of FIG. 3.
FIG. 3.

Measured parameters of Stark effect in a number of QDs for the , , , and transitions. For each transition we determine the energy at zero electric field, the permanent dipole moment, and the polarizability (the mean and standard deviation of the measured parameters is quoted).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Giant Stark effect in the emission of single semiconductor quantum dots