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Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
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10.1063/1.3462916
/content/aip/journal/apl/97/3/10.1063/1.3462916
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/3/10.1063/1.3462916

Figures

Image of FIG. 1.
FIG. 1.

Internal quantum efficiency of the samples (a) absolute vs (b) normalized to 1 vs .

Image of FIG. 2.
FIG. 2.

[(a)–(c)] Recombination coefficients and (d) , all plotted vs . The dotted line in (b) is the extrapolation of the 460 nm curve at low , based on the shape of the other curves. For all samples peaks at a similar carrier density [dashed line in (d)].

Image of FIG. 3.
FIG. 3.

Absorption coefficient under reverse bias , which induces flat bands in the QWs. The 460 and 470 nm samples have the same band edge. All curves show a shape and amplitude similar to that of bulk GaN (dashed line, shown for reference)—in particular, they display a well-defined band edge from which is derived and an excitonic peak. Also note the similarity in inhomogeneous broadening with bulk GaN, which indicates broadening is not dominated by alloy fluctuations in the MQWs.

Image of FIG. 4.
FIG. 4.

Experimental (symbols) and calculated (line) values of B at a carrier density vs the polarization field in forward bias condition .

Tables

Generic image for table
Table I.

Table of parameters for the MQW samples. [In] is estimated from x-ray diffraction. is measured at low carrier density .

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/content/aip/journal/apl/97/3/10.1063/1.3462916
2010-07-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/3/10.1063/1.3462916
10.1063/1.3462916
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