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Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes
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10.1063/1.3464976
/content/aip/journal/apl/97/3/10.1063/1.3464976
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/3/10.1063/1.3464976
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Changes in spontaneous polarization , piezoelectric polarization , and total polarization as a function of “degree of relaxation.” Calculated (b) band diagrams, (c) electron and hole wave functions, and (d) electron and hole carrier concentration of InGaN/GaN SQW structure at a current density of with various degree of relaxation.

Image of FIG. 2.
FIG. 2.

Changes in radiative and nonradiative current density of InGaN/GaN SQW structure as a function of degree of relaxation. The inset shows the calculated IQE for InGaN/GaN SQW structure as a function of degree of relaxation.

Image of FIG. 3.
FIG. 3.

The calculated EL spectra of InGaN/GaN SQW structure at a current density of as a function of degree of relaxation. The inset shows the changes in peak wavelength for InGaN/GaN SQW structure as a function of degree of relaxation.

Image of FIG. 4.
FIG. 4.

The calculated efficiency droop of InGaN/GaN SQW structure with different degree of relaxation as a function of current density.

Image of FIG. 5.
FIG. 5.

Wall-plug efficiency of V-LEDs with different curvature as a function of current density. The V-LEDs shows the convex curvature in view of -side up configuration and the curvature is calculated from the measured height, , as shown in inset.

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/content/aip/journal/apl/97/3/10.1063/1.3464976
2010-07-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/3/10.1063/1.3464976
10.1063/1.3464976
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