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Reflection high-energy electron diffraction scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy
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10.1063/1.3467136
/content/aip/journal/apl/97/3/10.1063/1.3467136
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/3/10.1063/1.3467136
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED patterns of GaN taken along the (a) and (b) azimuths. The intensity on the horizontal line is measured during continuous substrate rotation. (c) Time-dependent RHEED intensity along the horizontal line shown in (a) and (b). (d) RHEED scan produced from (c) by converting time into the azimuthal angle . The scans are obtained before Fe growth. The arrows refer to GaN and indicates real-space distance.

Image of FIG. 2.
FIG. 2.

RHEED patterns of Fe taken along the (a) and (b) azimuths of GaN. The intensity on the horizontal line is measured during continuous substrate rotation. (c) Time-dependent RHEED intensity along the horizontal line shown in (a) and (b). (d) RHEED scan produced from (c) by converting time into the azimuthal angle . The scans are obtained after growth of 7 nm Fe grown at . The arrows refer to GaN and indicates real-space distance.

Image of FIG. 3.
FIG. 3.

Schematic ball-and-stick models of Fe (dark) on the top Ga-layer (light) of GaN(0001). (a) Single and (b) three symmetry-equivalent Pitsch–Schrader domains (in reality, the latter do not coexist in one unit cell). The thick dashed line highlights one of these domains.

Image of FIG. 4.
FIG. 4.

RHEED scans along a line across the specular spot. The scans are obtained with an Fe film thickness of (a) 0–1.3 ML and (b) 2.3–3.6 ML during Fe growth at , respectively. The directions indicated refer to GaN(0001).

Image of FIG. 5.
FIG. 5.

RHEED scans along a line across the specular spot. The scans are obtained after growth of 7 nm Fe grown at (a) and (b) , respectively. The directions indicated refer to GaN(0001).

Image of FIG. 6.
FIG. 6.

(a) XRD Fe{211} pole figure for the sample grown at . (b) XRD scans of the and planes for the samples grown at , , and , respectively. The scans are vertically offset for clarity. (c) Comparison of the FWHM of XRD (Fe{211}) and RHEED (Fe{110}) scans of the samples grown at different temperature . Solid lines are guides to the eyes. The normal and inverted triangle represents the XRD FWHM of samples grown at and annealed after growth for 1 h at in situ and for 1 min at ex situ, respectively.

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/content/aip/journal/apl/97/3/10.1063/1.3467136
2010-07-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/3/10.1063/1.3467136
10.1063/1.3467136
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