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Near-field imaging and spectroscopy setup. The and Ge layers form a high-reflection coating on the GaP detection crystal for the counter-propagating probe beam. Inset shows dielectric-filled and unfilled waveguides (left and right, respectively) within an array.
THz electric near-field, , normalized to the incoming field, as it emerges from two adjacent waveguides within an array . The waveguide on the left is filled with DTA while the one on the right is empty. Scan area: . Bright (dark) color corresponds to high (low) electric field amplitude. Data were acquired in a nitrogen-purged environment.
(a) , measured in the near field, as it emerges from PE-filled and unfilled waveguides within a array (; ). (b) spectrum, normalized to incoming field, for silicon-filled, PE-filled and empty waveguides. Inset compares spectrum for silicon-filled waveguide with simulation. Silicon data are from a single waveguide . All data were acquired in a nitrogen-purged environment.
(a) Near-field spectrum for DTA-filled and unfilled waveguides, which are adjacent to one another within a array (; ). Data were acquired in a nitrogen-purged environment. (b) Absorption spectrum for pressed pellet (30:70 mass ratio), recorded in quasi near field setup (see Ref. 3). The uncertainty in the position of the absorption lines in (a) and (b) is approximately .
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