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(a) Below threshold L-I curves of the InGaN blue LDs for each active structure types measured under CW operation condition. Inset shows activity structures of InGaN single QW, double QWs with Si-doped barrier, and double QWs with undoped barrier, respectively. (b) External quantum efficiency of each type at the same current regime.
PL lifetimes of each type under reverse bias voltage to estimate a piezoelectric field through active region. Inset shows TRPL spectra of each type.
Radiative recombination rates of double InGaN QW structure with (a) Si-doped barrier and (b) undoped barrier, respectively
(a) FWHM and (b) peak wavelength of EL spectrum for each type of InGaN LDs at all operation current level.
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