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Investigation of dominant effect on efficiency droop in InGaN light emitting device
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10.1063/1.3467451
/content/aip/journal/apl/97/3/10.1063/1.3467451
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/3/10.1063/1.3467451
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Below threshold L-I curves of the InGaN blue LDs for each active structure types measured under CW operation condition. Inset shows activity structures of InGaN single QW, double QWs with Si-doped barrier, and double QWs with undoped barrier, respectively. (b) External quantum efficiency of each type at the same current regime.

Image of FIG. 2.
FIG. 2.

PL lifetimes of each type under reverse bias voltage to estimate a piezoelectric field through active region. Inset shows TRPL spectra of each type.

Image of FIG. 3.
FIG. 3.

Radiative recombination rates of double InGaN QW structure with (a) Si-doped barrier and (b) undoped barrier, respectively

Image of FIG. 4.
FIG. 4.

(a) FWHM and (b) peak wavelength of EL spectrum for each type of InGaN LDs at all operation current level.

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/content/aip/journal/apl/97/3/10.1063/1.3467451
2010-07-21
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of dominant effect on efficiency droop in InGaN light emitting device
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/3/10.1063/1.3467451
10.1063/1.3467451
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