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Comprehensive modeling of resistive switching in the heterostructure based on space-charge-limited conduction
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10.1063/1.3467461
/content/aip/journal/apl/97/3/10.1063/1.3467461
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/3/10.1063/1.3467461
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical curve of an device. The inset shows EDX depth profiling data.

Image of FIG. 2.
FIG. 2.

characteristics in a double-logarithmic plot at negative voltage sweep. Arrows indicate the direction of the voltage sweep. The values of different slopes are listed in the plots. For comparison, Poole–Frenkel emission (dotted line) and thermionic emission (dashed line) are also included.

Image of FIG. 3.
FIG. 3.

(a) Schematic of the derivation of the analytic expression of . (b) Extracted using the differential method.

Image of FIG. 4.
FIG. 4.

Measured and calculated characteristics at a negative voltage sweep with different types of trap distributions

Image of FIG. 5.
FIG. 5.

Measured and calculated characteristics in a double-logarithmic plot at a positive voltage sweep.

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/content/aip/journal/apl/97/3/10.1063/1.3467461
2010-07-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/3/10.1063/1.3467461
10.1063/1.3467461
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