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Comprehensive modeling of resistive switching in the heterostructure based on space-charge-limited conduction
2.R. Dong, D. S. Lee, W. F. Xiang, S. J. Oh, D. J. Seong, S. H. Heo, H. J. Choi, M. J. Kwon, S. N. Seo, M. B. Pyun, M. Hasan, and H. Hwang, Appl. Phys. Lett. 90, 042107 (2007).
7.K. C. Kao and W. Hwang, Electrical Transport in Solids (Pergamon, Oxford, New York, 1981).
10.Generally, oxygen vacancies in are known to act as n-type dopants. P. Knauth and H. L. Tuller, J. Appl. Phys. 85, 897 (1999). Therefore, is considered as a n-type semiconductor, and its conduction is based on a case of electron-only injected SCLC.
13.Actually, is dependent on the Schottky barrier height at ; hence, is more accurate. However, at is approximately . G. Rothenberger, D. Fitzmaurice, and M. Graetzel, J. Phys. Chem. 96, 5983 (1992). Therefore, is negligible for simplicity of the analytical derivation.
14.If a quasithermal equilibrium state is assumed when RS is occurred, is obtained by .
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