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Ge-stabilized tetragonal as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate
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10.1063/1.3455904
/content/aip/journal/apl/97/4/10.1063/1.3455904
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/4/10.1063/1.3455904
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD spectra for different gate stack structures with and without RTA.

Image of FIG. 2.
FIG. 2.

(a) (b) spectra analyzed by XPS measurement for the gate stack with different process conditions.

Image of FIG. 3.
FIG. 3.

(a) Normalized C-V characteristics measured at different frequencies for the Ge MOS capacitors with and without a layer where is the capacitance in accumulation region. (b) C-V characteristic for the Ge MOS capacitor with annealed stack measured at 1 MHz. The inset shows the corresponding hysteresis quantified by flatband voltage shift for ±5 V sweeping measured at different frequencies.

Image of FIG. 4.
FIG. 4.

Gate leakage current density as a function of EOT for Ge MOS devices with annealed stack and other amorphous high- gate dielectrics.

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/content/aip/journal/apl/97/4/10.1063/1.3455904
2010-07-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/4/10.1063/1.3455904
10.1063/1.3455904
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