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XRD spectra for different gate stack structures with and without RTA.
(a) (b) spectra analyzed by XPS measurement for the gate stack with different process conditions.
(a) Normalized C-V characteristics measured at different frequencies for the Ge MOS capacitors with and without a layer where is the capacitance in accumulation region. (b) C-V characteristic for the Ge MOS capacitor with annealed stack measured at 1 MHz. The inset shows the corresponding hysteresis quantified by flatband voltage shift for ±5 V sweeping measured at different frequencies.
Gate leakage current density as a function of EOT for Ge MOS devices with annealed stack and other amorphous high- gate dielectrics.
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