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Temperature stability of intersubband transitions in AlN/GaN quantum wells
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Image of FIG. 1.
FIG. 1.

The carrier density (upper panel) and conduction band profile (lower profile) of a ten period AlN/GaN MQW structure (sample B) with doped AlN barriers (gray background) and doped GaN cladding layers generated by the Schrödinger–Poisson solver. The two rightmost wells are completely depleted and do not contribute to the absorption. The inset illustrates the three lowest bound state of a period of the MQW structure. The dashed line gives the room-temperature Fermi level.

Image of FIG. 2.
FIG. 2.

Temperature-dependent shift in absorption peak-position for samples A to C. The peak positions are given relative to the room temperature result. The experimental data obtained by increasing the sample temperature are given by the filled dots, while the open circles give the data when decreasing the sample temperature. The full line gives the calculated shift in peak position. The inset shows the absorption spectrum at room temperature, where the -axis gives the photon energy in electron volt.


Generic image for table
Table I.

Characteristics of the samples A, B, and C at room temperature: barrier and well thickness, experimental, and calculated absorption peak positions.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature stability of intersubband transitions in AlN/GaN quantum wells