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(a) Low- and high-resolution (inset) TEM images of ZnO nanoparticles. (b) The SEM image for the surface of the ZNWA. (c) The HR-TEM image and SAED pattern (inset) for the top surface of the ZnO nanowall. (d) The cross-sectional FE-SEM image of the ZNWA. (e) The high-resolution TEM image and SAED pattern (inset) for the side surface of the ZnO nanowall. (f) The simulated image (inset) is matched well with the high-resolution TEM one for the (0001) plane of nanowall.
(a) PL emission intensity variation upon incident angle of pumping laser against -axis of Si-substrate. was fixed as . (b) -dependent PL spectra of ZNWA dispersed with a 150 g/mm grating. The inset shows the of ZNWA is only . was fixed as 20°. (c) Blowup spectra from Fig. 2(b). Blue dashed line is the calculated Gaussian peak and red dotted line is sum of the Gaussian peaks.
(a) Emission spectrum, dispersed with a 1200-g/mm grating, of ZNWA at 20, 30, and of . (b) -dependent PL decay kinetics of ZNWA.
(a) Randomly oriented ZnO nanowalls on the Si-wafer cause even the reflected excitation light to be almost completely absorbed via WGM-type modes. (b) Schematic view of the ZnO nanowall. (c) Whereas nonreflected incident excitation light is totally absorbed to excite the medium, emission light stimulates emission extremely efficiently via total internal reflection.
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