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High current densities in a highly photoluminescent organic single-crystal light-emitting transistor
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We report the improvement of electron transport in -bis(biphenylyl)--terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to , which is one or two orders of magnitude greater than the current densities achieved in previous devices.
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