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The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition metal-oxide-semiconductor capacitor
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10.1063/1.3467813
/content/aip/journal/apl/97/4/10.1063/1.3467813
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/4/10.1063/1.3467813
/content/aip/journal/apl/97/4/10.1063/1.3467813
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/content/aip/journal/apl/97/4/10.1063/1.3467813
2010-07-29
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/4/10.1063/1.3467813
10.1063/1.3467813
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