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The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition metal-oxide-semiconductor capacitor
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10.1063/1.3467813
/content/aip/journal/apl/97/4/10.1063/1.3467813
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/4/10.1063/1.3467813
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Multifrequency C-V responses in (a) TMA treated and (b) treated MOSCAPs, with PDA in gas. The inset in Fig. 1(b) shows the conductance-voltage (G-V) characteristics of the sample S2.

Image of FIG. 2.
FIG. 2.

(a) Multifrequency C-V responses in treated MOSCAPs, with PDA in gas. (b) The temperature dependent C-V responses at 10 kHz of the same sample. The inset in Fig. 2(a) shows the conductance-voltage (G-V) characteristics; the inset in Fig. 2(b) shows the temperature dependent C-V responses at 1 kHz.

Image of FIG. 3.
FIG. 3.

The , , XPS spectra of (a) native oxide-covered InGaAs surface; (b) TMA treated sample, with ALD , as deposited; (c) treated sample, with ALD , as deposited; (d) TMA treated sample, with ALD , after PDA in ; (e) treated sample, with ALD , after PDA in ; (f) treated sample, with ALD , after PDA in .

Image of FIG. 4.
FIG. 4.

(a) The comparison of C-V responses of sample S1, sample S2, and sample S3 at frequency of 1 KHz; (b) and (c) the -f curves of sample S1 and sample S2, where is the parallel conductance and is the measured angular frequency.

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/content/aip/journal/apl/97/4/10.1063/1.3467813
2010-07-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/4/10.1063/1.3467813
10.1063/1.3467813
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