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(a) I-V characteristics of devices deposited at various temperatures (150, 180, 200, and ). The HRTEM image of stacked structure is shown in the left inset. (b) I-V characteristics of devices deposited at 150 and measured during negative sweeps. The left inset shows the real photograph of our memory device.
(a) and (b) show the HRTEM images of stacks deposited at for the off and on state, respectively. denotes the thickness of the whole layer including both interface layers and is defined as the thickness of the top interface layer (Al–Ti–O). (c) and (d) present the statistical results of the and for the each state, respectively.
(a) and (b) show the BFTEM images of structure deposited at for the off and on state, respectively. (c) HRTEM image of the black-contrast region in (b). (d) is the enlarged HRTEM image of region marked with red dot lines of (c).
Schematic models showing the difference of the oxygen vacancy drift in amorphous thin films between (a) and (b) devices.
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