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Hysteresis loops measured for magnetic fields applied almost parallel and perpendicular to the EMD. Lower right inset: SEM image of the grain placed between two Hall crosses (labeled 1 and 2). Upper left inset: Barkhausen jumps corresponding to the displacement of a single domain wall.
(a) Easy-axis hysteresis loops simultaneously measured at two grain ends (crosses 1 and 2) at . The sweep direction is indicated by the arrows. The apparent negative remanence (see also Fig. 1 ) is due to the specific nature of the stray field to which our Hall crosses respond. The different regimes A and B of magnetization reversal (indicated by the shaded areas) correspond to different domain configurations, see Fig. 3 . (b) Magnification of the hysteresis loops in regions A and B . The jumps at the grain ends are strictly correlated within regime B. In contrast, jumps are mostly uncorrelated for regime A (jumps without counterpart are highlighted by question marks).
Results of micromagnetic simulations. The figures show one of the two surfaces of the grain in the -plane. One arrow corresponds to approximately 6 unit cells of discretization. The different domain configurations A and B correspond to the different magnetization regimes shown in Fig. 2 .
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