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Tuning carrier type and density in by Ca-doping
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10.1063/1.3473778
/content/aip/journal/apl/97/4/10.1063/1.3473778
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/4/10.1063/1.3473778
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction pattern of an undoped crystal. The inset is an azimuthal scan, exhibiting the expected threefold symmetry of the (015) diffraction peak.

Image of FIG. 2.
FIG. 2.

FTIR transmittance spectra for both doped and undoped samples. Two Ca-doped samples have the smallest interband transition energy, . Samples with higher (-type) and lower (-type) Ca doping have a larger . This indicates that Ca is close to the compensate point. The inset is a picture of a cleaved Ca-doped crystal.

Image of FIG. 3.
FIG. 3.

Interband transition energy, vs 3D carrier concentration, . Negative values in represent -type while positive values represent -type. The best fit of to the data results in and the reduced effective mass, . The insets show the sketches of interband transitions for - and -type samples. We use the same fitting parameters for both sides.

Image of FIG. 4.
FIG. 4.

Temperature-dependent resistivity curves for both doped and undoped samples. One -type sample shows the insulating behavior. Its resistivity is two orders of magnitude greater than that of the metallic samples. The inset is the normalized resistivity vs .

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/content/aip/journal/apl/97/4/10.1063/1.3473778
2010-07-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning carrier type and density in Bi2Se3 by Ca-doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/4/10.1063/1.3473778
10.1063/1.3473778
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