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Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Hall resistivity, hall mobility (inset), and (b) Hall carrier concentration of nonintentionally doped midwave SL vs measurement temperature; SL is residually p-type at temperatures below 200 K and n-type at temperatures above 200 K. From Hall resistivity two activation energies of 193 and 23.86 meV were extracted which indicates existence of shallow and deep impurity levels in the SL.

Image of FIG. 2.
FIG. 2.

(a) Hall resistivity of nonintentionally doped long-wave SL vs measurement temperature, (b) Hall carrier concentration vs measurement temperatures; SL is residually n-type at all of the measurement temperatures. At low measurement temperatures extrinsic carriers and at high measurement temperatures intrinsic carriers are the dominant source of carriers in the LW SL.

Image of FIG. 3.
FIG. 3.

(a) Hall mobility vs measurement temperature, and (b) Hall peak mobility of nonintentionally doped long-wave SL vs growth temperature; as the growth temperature increases, interface scattering becomes the dominant source of scattering in the SL which decreased the mobility and causes temperature independent behavior of the mobility. Also due to interface roughness scattering peak mobility decreases.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate