1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ferroelectric transistors with improved characteristics at high temperature
Rent:
Rent this article for
USD
10.1063/1.3467471
/content/aip/journal/apl/97/5/10.1063/1.3467471
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3467471
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Drain current vs gate voltage, , experimental characteristics are shown only at 300, 330, and 355 K for the SOI Fe-MOSFET (with equal width and length, ). The loop frequency of the measurement is about 10 mHz. The leakage current floor (defined here as the current for gate voltage smaller than −1 V) exponentially increases by increasing the temperature but the remains always higher than . The analysis suggests that for our ferroelectric gate stack. The inset shows an FIB cross section image with the thickness of the different gate stack layers and the schematic of the capacitive model of the device.

Image of FIG. 2.
FIG. 2.

Transconductance, , as a function of the gate voltage, , for the sweeping up branch of the curve (a smoothing has been performed by averaging eight adjacent points) calculated by numerical derivation of the current curve. A very significant improvement is observed from ambient temperature up to (curves at 340 and 355 K), followed by a degradation (curves at 370 and 395 K), which correspond to the gate stack increase and decrease with the temperature.

Image of FIG. 3.
FIG. 3.

SS, as a function of T and a minimum is clearly visible at the transition temperature of the ferroelectric material, as predicted by the analytical model. The values of SS are extracted at each temperature by a linear interpolation method in the subthreshold region. The inset shows the detailed, numerically calculated vs plot, at different temperatures; the data clearly confirms that the minimum of each curve decreases till and then degrades for .

Loading

Article metrics loading...

/content/aip/journal/apl/97/5/10.1063/1.3467471
2010-08-06
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ferroelectric transistors with improved characteristics at high temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3467471
10.1063/1.3467471
SEARCH_EXPAND_ITEM