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Transparent p-type thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing
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View: Figures


Image of FIG. 1.
FIG. 1.

Comparison between the band structure of and SnO. In the case of SnO the top of the valence band consist of hybridized orbital of and .

Image of FIG. 2.
FIG. 2.

X-ray diffraction patterns for a films produced with a between 7.1% and 21.7%, as-deposited and annealed at in air atmosphere, with a thickness of 200 nm deposited on a glass substrate. The inset shows the crystal structure of tin (II) oxide (Ref. 18) showing the layered structure of SnO and the wide-stretched open space between the Sn–O–Sn layers.

Image of FIG. 3.
FIG. 3.

Dependence of measured by four-point probe on , for as-deposited and annealed films. The dashed line represents the electrical resistivity of metallic Sn.

Image of FIG. 4.
FIG. 4.

Dependence of on for samples fabricated at and . The top right inset shows the plot for the same samples. The bottom left inset shows the planar gap cell configuration used for the conductivity measurements.

Image of FIG. 5.
FIG. 5.

Output characteristics for p-type TFTs working in enhancement mode, where is produced with (a) and (b) . (c) Transfer characteristics , left axis and leakage current , right axis, for TFTs annealed in air at , where is produced with and 11.5%. The inset shows the plots represented in linear scale, for extraction.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing