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Comparison between the band structure of and SnO. In the case of SnO the top of the valence band consist of hybridized orbital of and .
X-ray diffraction patterns for a films produced with a between 7.1% and 21.7%, as-deposited and annealed at in air atmosphere, with a thickness of 200 nm deposited on a glass substrate. The inset shows the crystal structure of tin (II) oxide (Ref. 18) showing the layered structure of SnO and the wide-stretched open space between the Sn–O–Sn layers.
Dependence of measured by four-point probe on , for as-deposited and annealed films. The dashed line represents the electrical resistivity of metallic Sn.
Dependence of on for samples fabricated at and . The top right inset shows the plot for the same samples. The bottom left inset shows the planar gap cell configuration used for the conductivity measurements.
Output characteristics for p-type TFTs working in enhancement mode, where is produced with (a) and (b) . (c) Transfer characteristics , left axis and leakage current , right axis, for TFTs annealed in air at , where is produced with and 11.5%. The inset shows the plots represented in linear scale, for extraction.
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