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Cross-sectional HR-TEM micrographs of (a) , with and and (b) , with and a native oxide layer.
HR-TEM micrographs of (a) (cross-sectional), with and ; (b) (plan-view) shows a defect free substrate layer.
(a) JV responses for all samples, with significantly lower leakage for the ( ICL) devices, compared to devices. (b) Measured and simulated (from the 1D Poisson–Schrödinger solver) 1 kHz CV responses for all samples. Inset to (a) shows the CET vs physical thickness with a linear fit.
(a) and (b) show CV responses (20 frequencies; 1 kHz–1 MHz) for samples and , respectively. The insets to (a) and (b) show the corresponding GV responses.
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