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Structural and electrical analysis of the atomic layer deposition of capacitors with and without an interface control layer
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10.1063/1.3473773
/content/aip/journal/apl/97/5/10.1063/1.3473773
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3473773
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional HR-TEM micrographs of (a) , with and and (b) , with and a native oxide layer.

Image of FIG. 2.
FIG. 2.

HR-TEM micrographs of (a) (cross-sectional), with and ; (b) (plan-view) shows a defect free substrate layer.

Image of FIG. 3.
FIG. 3.

(a) JV responses for all samples, with significantly lower leakage for the ( ICL) devices, compared to devices. (b) Measured and simulated (from the 1D Poisson–Schrödinger solver) 1 kHz CV responses for all samples. Inset to (a) shows the CET vs physical thickness with a linear fit.

Image of FIG. 4.
FIG. 4.

(a) and (b) show CV responses (20 frequencies; 1 kHz–1 MHz) for samples and , respectively. The insets to (a) and (b) show the corresponding GV responses.

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/content/aip/journal/apl/97/5/10.1063/1.3473773
2010-08-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/5/10.1063/1.3473773
10.1063/1.3473773
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